Effect of multiplication region mole fraction on characteristics of Alxga1-Xas-Apds in the linear and geiger

Progress In Electromagnetics Research B

Volumn 2, Issue , 2008, Pages 73-82

  Saeid, M P ^a  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSED MATTER PHYSICS; RADIATION;

AVALANCHE PHOTO DIODE (APD); DEAD SPACE; EXCESS NOISE FACTOR; IONIZATION COEFFICIENT; MOLE FRACTION; PERFORMANCE FACTORS;

III-V SEMICONDUCTORS;

EID: 84960182989     PISSN: 19376472     EISSN: None     Source Type: Journal    
DOI: 10.2528/pierb07111001     Document Type: Article

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