In situ microwave characterisation of medium-k HfO2 and high-k SrTiO3 dielectrics for metal-insulator-metal capacitors integrated in back-end of line of integrated circuits

IET Microwaves, Antennas and Propagation

Volumn 2, Issue 8, 2008, Pages 781-788

  Vo, T T ^a   Lacrevaz, T ^a   Bermond, C ^a   Bertaud, T ^a   Flechet B ^a   Farcy, A ^a   Morand, Y ^b   Blonkowski, S ^b   Torres, J ^b   Guigues, B ^b   Defay E ^c  

^a UNIVERSITÉ DE SAVOIE   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC EQUIPMENT; HAFNIUM COMPOUNDS; INTEGRATED CIRCUITS; METAL INSULATOR BOUNDARIES; METALS; MICROWAVES; PERMITTIVITY; SEMICONDUCTOR INSULATOR BOUNDARIES; STRONTIUM ALLOYS;

CHARACTERISATION; COMPLEX PERMITTIVITIES; DAMASCENE ARCHITECTURES; END OF LINES; HIGH PERMITTIVITY DIELECTRICS; HIGH-K DIELECTRICS; HIGH-K MATERIALS; IN-SITU; LARGE BANDS; METAL CAPACITORS; MICROSTRIP WAVEGUIDES; MIM CAPACITORS; PASSIVE COMPONENT SIZES;

MIM DEVICES;

EID: 56749085325     PISSN: 17518725     EISSN: 17518733     Source Type: Journal    
DOI: 10.1049/iet-map:20070344     Document Type: Conference Paper

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