In-situ microwave characterization of medium-k HfO2 and high-k STO dielectrics for MIM capacitors integrated in back-end of line of IC

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn , Issue , 2007, Pages

  Vo, T T ^a   Lacrevaz, T ^a   Flechet B ^a   Farcy, A ^b   Morand, Y ^b   Blonkowski, S ^b   Torres, J ^b   Defay E ^c  

^a UNIVERSITÉ DE SAVOIE   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

Coplanar waveguide; HfO2; High k dielectric; Loss tangent; Medium k dielectric; Microstrip waveguide; Microwave characterization; MIM capacitor; Propagation exponent; PZT; Scattering parameters; STO

Indexed keywords

CHLORINE COMPOUNDS; HAFNIUM COMPOUNDS; PERMITTIVITY;

ASIA-PACIFIC; COMPLEX PERMITTIVITY; COPLANAR WAVEGUIDE; HFO2; HIGH-K DIELECTRIC; IN-SITU; LOSS TANGENT; MEDIUM-K DIELECTRIC; MICROSTRIP WAVEGUIDE; MICROWAVE CHARACTERIZATION; MIM CAPACITOR; PROPAGATION EXPONENT; PZT; SCATTERING PARAMETERS; STO;

MICROWAVES;

EID: 51849120609     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2007.4555089     Document Type: Conference Paper

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