Integration of silicon nanocrystal memory arrays with HfAlOx based interpoly dielectric

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 64-67

  Molas, G ^a   Bocquet, M ^a   Buckley, J ^a   Grampeix, H ^a   Colonna, J P ^a   Masarotto, L ^a   Martin, F ^a   Gely M ^a   De Salvo, B ^a   Deleonibus, S ^a   Golubovic D S ^b   Van Duuren, M J ^b   Bongiorno, C ^c   Lombardo, S ^c  

^a CEA LETI   (France)

^b NXP TSMC Research Center   (Belgium)

^c CNR   (Italy)

Author keywords

Component: non volatile memories; HfAlO; High k; Interpoly; Silicon nanocrystals

Indexed keywords

ELECTRIC CONDUCTIVITY; NANOCLUSTERS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; NONMETALS; OPTICAL WAVEGUIDES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; SILICON; TECHNOLOGY;

COMPONENT: NON-VOLATILE MEMORIES; FOWLER-NORDHEIM; HFALO; HIGH-K; INTER-POLY DIELECTRICS; INTERNATIONAL CONFERENCES; INTERPOLY; MEMORY TECHNOLOGY; NON-VOLATILE; NON-VOLATILE MEMORY; OPERATION REGIMES; SEMICONDUCTOR MEMORIES; SILICON NANOCRYSTAL; SILICON NANOCRYSTAL MEMORIES; SILICON NANOCRYSTALS; SINGLE CELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50249181743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.25     Document Type: Conference Paper

References (9)

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