Photoconductivity of Hf-based binary metal oxides

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2400-2402

  Shamuilia, S ^a   ev, V V Afanas' ^a   Stesmans, A ^a   McCarthy, I ^b   Campbell, S A ^b   Boutchich, M ^c   Lopes, J M J ^d   Roeckerath, M ^d   Heeg, T ^d   Rije, E ^d   Mantl, S ^d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF MINNESOTA   (United States)

^c NXP TSMC Research Center   (Belgium)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Bandgap; Binary metal oxides; High k insulators; Non volatile; Phase separation

Indexed keywords

ALUMINUM; CERIUM; CERIUM COMPOUNDS; CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; ENERGY GAP; GALLIUM ALLOYS; HAFNIUM; HAFNIUM COMPOUNDS; ISOMERS; LARGE SCALE SYSTEMS; OXIDES; PHASE MODULATION; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; PHOTOREFRACTIVE MATERIALS; POSITIVE IONS; SEPARATION; SILICON;

BANDGAP; BANDGAP ENGINEERINGS; BINARY METAL OXIDES; BINARY OXIDES; GAP ENERGIES; GAP VALUES; HIGH-K INSULATORS; NON-VOLATILE; OXIDE LAYERS; SI CONCENTRATIONS; SI OXIDES; THIN LAYERS;

PHASE SEPARATION;

EID: 56649114369     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.016     Document Type: Article

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