Hard transparent conducting hex-element complex oxide films by reactive sputtering

Journal of Materials Research

Volumn 23, Issue 11, 2008, Pages 3075-3089

  Chen, Ta Kun ^a   Wong, Ming Show ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; CIVIL AVIATION; CONDUCTIVE FILMS; CRYSTALLINE MATERIALS; ELECTRIC NETWORK ANALYSIS; ELECTRIC RESISTANCE; HEAT CONDUCTION; LIGHT METALS; MAGNETRON SPUTTERING; OPTICAL CONDUCTIVITY; OXYGEN; PHOTOELECTRON SPECTROSCOPY; POSITIVE IONS; REACTIVE SPUTTERING; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

AL CONTENTS; ALLOY TARGETS; ALUMINUM CONTENTS; CARRIER DENSITIES; CATION DISTRIBUTIONS; COMPLEX OXIDE FILMS; CRYSTAL FIELDS; CRYSTALLINE OXIDES; DIRECT CURRENT MAGNETRON SPUTTERING; ELECTRICAL CONDUCTIONS; ELECTRICAL RESISTIVITIES; EXCESS OXYGENS; FILM CONDUCTIVITIES; GROWTH CONDITIONS; HALL MEASUREMENTS; HIGH HARDNESSES; HIGH OXYGEN PARTIAL PRESSURES; INFRARED REGIONS; METALLIC CONDUCTIONS; MOLAR RATIOS; NEGATIVE DEVIATIONS; OCTAHEDRAL SITES; OPTICAL TRANSMITTANCES; SEMICONDUCTING PROPERTIES; TRANSPARENT CONDUCTING; TRANSPARENT CONDUCTING OXIDE FILMS; VEGARD'S LAWS; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS ANALYSES;

OXIDE FILMS;

EID: 56549092767     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2008.0371     Document Type: Article

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