Relationship between structural and optical properties in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition

Journal of the Electrochemical Society

Volumn 145, Issue 10, 1998, Pages 3615-3620

  Milovzorov, D ^a,b   Inokuma, T ^a   Kurata, Y ^a   Hasegawa, S ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN SIZE AND SHAPE; HYDROGEN; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SILANES; VOLUME FRACTION; X RAY DIFFRACTION;

BONDING PROPERTY; PHOTOLUMINESCENT RESPONSE; SILICON TETRAFLUORIDE;

FILMS;

EID: 0032186535     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838852     Document Type: Article

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