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Volumn 100, Issue 8, 2006, Pages

Size-dependent energy band gap and dielectric constant within the generalized Penn model applied to a semiconductor nanocrystallite

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EIGENVALUES AND EIGENFUNCTIONS; MATHEMATICAL MODELS; PERMITTIVITY; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DEVICES;

EID: 33750510557     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357421     Document Type: Article
Times cited : (38)

References (41)
  • 39
    • 33847596250 scopus 로고
    • 0163-1829 10.1103/PhysRevB.27.985
    • D. E. Asnes and A. A. Studna, Phys. Rev. B 0163-1829 10.1103/PhysRevB.27. 985 27, 985 (1983): G. E. Jellison, Jr. and F. A. Modine, Phys. Rev. B 27, 7466 (9183).
    • (1983) Phys. Rev. B , vol.27 , pp. 985
    • Asnes, D.E.1    Studna, A.A.2
  • 40
    • 0000108278 scopus 로고    scopus 로고
    • D. E. Asnes and A. A. Studna, Phys. Rev. B 0163-1829 10.1103/PhysRevB.27. 985 27, 985 (1983): G. E. Jellison, Jr. and F. A. Modine, Phys. Rev. B 27, 7466 (9183).
    • (9183) Phys. Rev. B , vol.27 , pp. 7466
    • Jellison Jr., G.E.1    Modine, F.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.