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Volumn 255, Issue 4, 2008, Pages 1364-1367

Quantification in dynamic SIMS: Current status and future needs

Author keywords

Complementary methods; Focused ion beam (FIB); Ion implantation; Quantification

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; FOCUSED ION BEAMS; GALLIUM ALLOYS; III-V SEMICONDUCTORS; ION SOURCES; SI-GE ALLOYS; SPECIMEN PREPARATION;

EID: 56449085408     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.041     Document Type: Article
Times cited : (22)

References (38)
  • 15
    • 56449092003 scopus 로고    scopus 로고
    • T. Buyuklimanli, Evans Analytical Group, unpublished data showing monitoring over 5 year time period.
    • T. Buyuklimanli, Evans Analytical Group, unpublished data showing monitoring over 5 year time period.
  • 23
    • 56449126848 scopus 로고    scopus 로고
    • Asylum AFM measurement of oxygen bombardment of Si showing initial swelling can be measured.
    • Asylum AFM measurement of oxygen bombardment of Si showing initial swelling can be measured.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.