Thermal stability of lanthanum scandate dielectrics on Si(100)

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Sivasubramani, P ^e   Lee, T H ^e   Kim, M J ^e   Kim, J ^e   Gnade, B E ^e   Wallace, R M ^a,b   Edge, L F ^c   Schlom, D G ^c   Stevie, F A ^d   Garcia, R ^d   Zhu, Z ^d   Griffis, D P ^d  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

LANTHANUM SCANDATE; MOLECULAR BEAM DEPOSITED; SECONDARY ION MASS SPECTROMETRY (SIMS);

DIELECTRIC MATERIALS; LANTHANUM COMPOUNDS; MASS SPECTROMETRY; RAPID THERMAL ANNEALING; THERMODYNAMIC STABILITY; THIN FILMS;

SILICON;

EID: 33845882219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2405418     Document Type: Article

References (18)

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