Determination of sub-2-nm SiO2 interlayer thickness using secondary ion mass spectrometry

Surface and Interface Analysis

Volumn 31, Issue 1, 2001, Pages 51-53

  Jones, Clive M ^a   Zhao, Jin ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; INTERFACES (MATERIALS); ION BOMBARDMENT; ION IMPLANTATION; OXYGEN; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; STOICHIOMETRY; THICKNESS MEASUREMENT;

CONCENTRATION DEPTH PROFILE; INTERFACIAL OXYGEN PEAK; INTERLAYERS;

SILICA;

EID: 0035122953     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.952     Document Type: Article

References (3)

1. Holland R, Blackmore GW. J. Cryst. Growth 1984; 68: 271.
2. Hofmann S. J. Vac. Sci. Technol. B 1992; 10: 316.
3. Zhao J, Na MH, McKeown PJ, Chang HC, Lee EH, Luo H, Chen JX, Wood TD, Gardella Jr JA. J. Vac. Sci. Technol. B 1999; 17: 224.