Development of certified reference materials of ion-implanted dopants in silicon for calibration of secondary ion mass spectrometers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1365-1375

  Simons, D S ^a   Downing, R G ^a   Lamaze, G P ^a   Lindstrom, R M ^a   Greenberg, R R ^a   Paul, R L ^a   Schiller, S B ^a   Guthrie, W F ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; DOPING (ADDITIVES); ION IMPLANTATION; NEUTRON ACTIVATION ANALYSIS; SECONDARY ION MASS SPECTROMETRY;

CERTIFICATION MEASUREMENTS; CERTIFIED REFERENCE MATERIALS; DOPANT CONCENTRATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 34547589479     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2759937     Document Type: Article

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