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Volumn 252, Issue 19, 2006, Pages 7179-7181

Back side SIMS analysis of hafnium silicate

Author keywords

Back side analysis; Hafnium silicate; High k dielectrics; SIMS

Indexed keywords

DIFFUSION; ION BOMBARDMENT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SPUTTERING;

EID: 33747163304     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.099     Document Type: Article
Times cited : (8)

References (15)
  • 7
    • 0347205551 scopus 로고
    • Benninghoven A., Huber A.M., and Werner H.W. (Eds), Wiley, New York
    • Lareau R.T. In: Benninghoven A., Huber A.M., and Werner H.W. (Eds). Secondary Ion Mass Spectrometry, SIMS VI, (1988), Wiley, New York 437
    • (1988) Secondary Ion Mass Spectrometry, SIMS VI , pp. 437
    • Lareau, R.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.