The impact of deep Ni salicidation and NH3 plasma treatment on nano-SOI FinFETs

IEEE Electron Device Letters

Volumn 27, Issue 10, 2006, Pages 799-801

  You, Hsin Chiang ^a   Kuo, Po Yi ^a   Ko, Fu Hsiang ^a   Chao, Tien Sheng ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Deep Ni salicidation; Drain induced barrier lowering (DIBL); Floating body effect; NH3; Plasma; Subthreshold slope (SS)

Indexed keywords

DEEP NI SALICIDATION; DRAIN-INDUCED BARRIER LOWERING (DIBL); FLOATING-BODY EFFECT; NH3; SUBTHRESHOLD SLOPE (SS);

BIPOLAR TRANSISTORS; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; NICKEL; PLASMA APPLICATIONS; PLASMAS; TUNNEL DIODES;

MOSFET DEVICES;

EID: 55849142402     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.882519     Document Type: Article

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