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Nanotechnology

Volumn 19, Issue 27, 2008, Pages

Memory properties of a Ge nanoring MOS device fabricated by pulsed laser deposition

(1) Ma, Xiying a

a SHAOXING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DATA STORAGE EQUIPMENT; DROP FORMATION; DROPS; FLUID MECHANICS; GERMANIUM; INJECTION (OIL WELLS); LASERS; LEAKAGE CURRENTS; MOS DEVICES; NANORINGS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; OPTICAL DESIGN; PULSED LASER APPLICATIONS; SILICON; SURFACE CHEMISTRY; SURFACE TENSION; THRESHOLD VOLTAGE; TWO DIMENSIONAL; WEIGHT CONTROL;

INTERFACE STATES; LATERAL STRAINS; LOW LEAKAGE CURRENT; MEMORY PROPERTIES; METAL OXIDE SEMICONDUCTOR (MOS) STRUCTURES; NANO RING; NON-VOLATILE; OPERATING VOLTAGES; PULSED LASER DEPOSITION (PLD); PULSED LASERS; RAPID ANNEALING; SI(1 0 0 ); SMALL ROUGHNESS; STORAGE PROPERTIES; THRESHOLD VOLTAGE SHIFTS; TWO-DIMENSIONAL (2D);

PULSED LASER DEPOSITION;

ARGON; GERMANIUM; NANOPARTICLE; QUANTUM DOT; SILICON;

ARGON LASER; ARTICLE; CHEMICAL STRUCTURE; ELECTRIC POTENTIAL; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; LASER; NANOTECHNOLOGY; PRIORITY JOURNAL; SURFACE TENSION; THERMOREGULATION;

EID: 48249134396 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/19/27/275706 Document Type: Article

Times cited : (18)

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