Gain compression and above-threshold linewidth enhancement factor in 1.3-μm InAs-GaAs quantum-dot lasers

IEEE Journal of Quantum Electronics

Volumn 44, Issue 10, 2008, Pages 946-951

  Grillot, Frédéric ^a   Dagens, Béatrice ^b   Provost, Jean Guy ^c   Su, Hui ^d   Lester, Luke F ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c ALCATEL THALES III V LAB   (France)

^d Broadband Division   (United States)

Author keywords

Gain compression; Linewidth enhancement factor; Quantum dot; Semiconductor laser

Indexed keywords

DIRECT MODULATION; GAAS; GAIN COMPRESSION; INAS; INJECTED CURRENT; LINEWIDTH ENHANCEMENT FACTOR; LOW THRESHOLD CURRENT; MAXIMUM GAIN; MODULATION BANDWIDTH; MODULATION RESPONSE; QD DEVICES; QD LASERS; QUANTUM DOT SEMICONDUCTOR LASERS; QUANTUM DOTS; STRONG DAMPING; USEFUL PROPERTIES;

BANDWIDTH COMPRESSION; GALLIUM ALLOYS; GALLIUM ARSENIDE; LASERS; LINEWIDTH; MODULATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS;

EID: 56249106228     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.2003106     Document Type: Article

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