Quantum dot tunnel injection lasers with large modulation bandwidth at room temperature

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 137-138

  Ghosh, S ^a   Bhattacharya, P ^a   Wu, Z K ^a   Norris, T ^a   Singh, J ^a   Kochman, B ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Bandwidth; Carrier confinement; Gallium arsenide; Hot carriers; Impedance measurement; Potential well; Quantum dot lasers; Quantum well lasers; Temperature; Time measurement

Indexed keywords

BANDWIDTH; ELECTRIC IMPEDANCE MEASUREMENT; GALLIUM; GALLIUM ARSENIDE; HETEROJUNCTIONS; HOT CARRIERS; HOT ELECTRONS; INJECTION LASERS; MODULATION; NANOCRYSTALS; QUANTUM DOT LASERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; TIME MEASUREMENT;

CARRIER CONFINEMENTS; DIFFERENTIAL TRANSMISSION; HIGH FREQUENCY IMPEDANCE MEASUREMENTS; IMPEDANCE MEASUREMENT; MODULATION BANDWIDTH; PERFORMANCE CHARACTERISTICS; POTENTIAL WELLS; SEPARATE CONFINEMENT HETEROSTRUCTURES;

QUANTUM WELL LASERS;

EID: 84948666561     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029554     Document Type: Conference Paper

References (5)

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