Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser

Electronics Letters

Volumn 41, Issue 6, 2005, Pages 323-324

  Dagens, B ^a   Markus, A ^b   Chen, J X ^b,c   Provost, J G ^a   Make, D ^a   Le Gouezigou, O ^a   Landreau, J ^a   Fiore, A ^b,d   Thedrez, B ^a  

^a NOKIA RESEARCH CENTER   (United States)

^b EPFL   (Switzerland)

^c LUCENT TECHNOLOGIES   (United States)

^d IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; GROUND STATE; INTERFEROMETRY; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; OPTICAL WAVEGUIDES; SELF ASSEMBLY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SIGNAL PROCESSING; THERMAL EFFECTS;

FREQUENCY MODULATED EMISSION; GROUND STATE LASING; LINEWIDTH ENHANCEMENT FACTOR; QUANTUM DOT LASERS;

FREQUENCY MODULATION;

EID: 16244422039     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057956     Document Type: Article

References (6)

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3. Markus, A., et al.: 'Simultaneous two-state lasing in quantum dot lasers', Appl. Phys. Lett., 2003, 82, pp. 1818-1820
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