Temperature insensitive 1.3m InGaAs/GaAs quantum dot distributed feedback lasers for 10Gbit/s transmission over 21km

Electronics Letters

Volumn 42, Issue 25, 2006, Pages 1457-1458

  Gerschutz F ^a   Fischer, M ^a   Koeth, J ^a   Chacinski, M ^b   Schatz, R ^b   Kjebon, O ^b   Kovsh, A ^c   Krestnikov, I ^c   Forchel, A ^d  

^a NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c NL Nanosemiconductor GmbH   (Germany)

^d UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; FREQUENCY MODULATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS;

MODULATION SPEED; P-TYPE MODULATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33845481403     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20063401     Document Type: Article

References (10)

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