The linewidth enhancement factor α of quantum dot semiconductor lasers

Optics Express

Volumn 14, Issue 7, 2006, Pages 2950-2955

  Melnik, Sergey ^a   Huyet, Guillaume ^a   Uskov, Alexander V ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

MEASUREMENTS; PLASMAS; SEMICONDUCTOR QUANTUM DOTS;

ENHANCEMENT FACTOR; INTRINSIC CAPTURE/ESCAPE DYNAMICS; QUANTUM DOT SEMICONDUCTOR LASERS;

SEMICONDUCTOR LASERS;

EID: 33645505759     PISSN: 10944087     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.14.002950     Document Type: Article

References (23)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (John Wiley & Sons, Chichester, 1999).
2. Z. Mi, P. Bhattacharya, and S. Fathpour, "High-speed 1.3μm tunnel injection quantum-dot lasers," Appl. Phys. Lett. 86, 153109 (2005).
3. M. Kuntz, G. Fiol, M. Lämmlin, C. Schubert, A. R. Kovsh, A. Jacob, A. Umbach, and D. Bimberg, "10Gbit/s data modulation using 1.3μm InGaAs quantum dot lasers," Electron. Lett. 41, 244-245 (2005).
4. D. O'Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, A. R. Kovsh, "Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819-1820 (2003).
5. C. H. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron. 18, 259-264 (1982).
6. T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. Lett. 11, 1527-1529 (1999).
7. C. Harder, K. Vahala, and A. Yariv, "Measurement of the linewidth enhancement factor a of semiconductor lasers," Appl. Phys. Lett. 42, 328-330 (1983).
8. R. Jin, D. Boggavarapu, G. Khitrova, H. M. Gibbs, Y. Z. Hu, S. W. Koch, and N. Peyghambarian, "Linewidth broadening factor of a microcavity semiconductor laser," Appl. Phys. Lett. 61, 1883-1885 (1992).
9. Z. Toffano, A. Destrez, C. Birocheau, and L. Hassine, "New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold," Electron. Lett. 28, 9-11 (1992).
10. K. Petermann, Laser Diode Modulation and Noise (Kluwer, Dordrecht, 1991).
11. S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, "Linewidth enhancement factor in InGaAs quantum-dot lasers," IEEE J. Quantum Electron. 40, 1423-1429 (2004).
12. J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, "Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310nm," Electron. Lett. 40, 428-430 (2004).
13. A. A. Ukhanov, A. Stintz, P. G. Eliseev, and K. J. Malloy, "Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers," Appl. Phys. Lett. 84, 1058-1060 (2004).
14. A. Markus, J. X. Chen, O. Gauthier-Lafaye, J.-G. Provost, C. Paranthoën and A. Fiore, "Impact of intraband relaxation on the performance of a quantum-dot laser," IEEE J. Select. Topics Quantum Electron. 9, 1308-1314 (2003).
15. B. Dagens, A. Markus, J. X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore and B. Thedrez, "Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser," Electron. Lett. 41, 323-324 (2005).
16. A. V. Uskov, E. P. O'Reilly, D. McPeake, N. N. Ledentsov, D. Bimberg, G. Huyet, "Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states," Appl. Phys. Lett. 84, 272-274 (2004).
17. J. Oksanen and J. Tulkki, "Linewidth enhancement factor and chirp in quantum dot lasers," J. Appl. Phys. 94, 1983-1989 (2003).
18. M. Sugawara, K. Mukai, and H. Shoji, "Effect of phonon bottleneck on quantum-dot laser performance," Appl. Phys. Lett. 71, 2791-2793 (1997).
19. A. V. Uskov, Y. Boucher, J. Le Bihan, and J. McInerney, "Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: quantum efficiency and nonlinear gain," Appl. Phys. Lett. 71, 1499-1501 (1998).
20. S. P. Hegarty, B. Corbett, J. G. McInerney and G. Huyet, "Free-carrier effect on index change in 1.3 μm quantum-dot lasers," Electron. Lett. 41, 416-418 (2005).
21. H. C. Schneider, W. W. Chow and S. W. Koch, "Anomalous carrier-induced dispersion in quantum-dot active media," Phys. Rev. B 66, 041310 (2002).
22. H. C. Wong, G. B. Ren, J. M. Rorison. "Mode amplification in inhomogeneous QD semiconductor optical amplifiers," Opt. Quant. Electron, (to be published).
23. H. Su, L. Zhang, R. Wang, T. C. Newell, A. L. Gray and L. F. Lester, "Linewidth study of InAs-InGaAs quantum dot distributed feedback lasers," IEEE Photon. Technol. Lett. 16, 2206-2208 (2004).