Thickness dependence of photoluminescence for tensely strained silicon layer on insulator

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Munguia J ^a   Bluet, J M ^a   Baira, M ^a   Marty, O ^a   Bremond, G ^a   Hartmann, J M ^b   Mermoux, M ^c  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA LETI   (France)

^c LEPMI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; LUMINESCENCE; MOSFET DEVICES; PHOTOLUMINESCENCE; SILICON;

CRITICAL THICKNESSES; CRYSTALLINE QUALITIES; LOW TEMPERATURE PHOTOLUMINESCENCES; OPTICAL BANDS; STRAINED LAYERS; STRAINED SI LAYERS; STRAINED SILICON ON INSULATORS; STRAINED SILICONS; THICKNESS DEPENDENCES; THIN LAYERS;

LIGHT EMISSION;

EID: 56249093790     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3023058     Document Type: Article

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