InN films prepared by sputtering in N2 and H2 - effects of H2 pressure on film properties

Shinku/Journal of the Vacuum Society of Japan

Volumn 43, Issue 3, 2000, Pages 296-298

  Saito, Nobuo ^a   Igasaki, Yasuhiro ^b  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; ENERGY GAP; FILM PREPARATION; HYDROGEN; MAGNETRON SPUTTERING; NITROGEN; OPTICAL PROPERTIES; PARTIAL PRESSURE; SEMICONDUCTING INDIUM COMPOUNDS;

GAS MIXTURES; INDIUM NITRIDE; RADIOFREQUENCY MAGNETRON SPUTTERING;

THIN FILMS;

EID: 0033728698     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.43.296     Document Type: Article

References (9)

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