SCOPUS 정보 검색 플랫폼

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2
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- Performance limiting surface deffects in SiC epitaxial p-n junction diodes
- Kimoto T., Miyamoto N., Matsunami H. Performance limiting surface deffects in SiC epitaxial p-n junction diodes. IEEE Transactions on Electronic Devices. 46:1999;471-477.
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- Kimoto, T.¹ Miyamoto, N.² Matsunami, H.³

3
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- Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high temperature applications: A review
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- Casady, J.B.¹ Johnson, R.W.²

5
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- Electrical characteristics modeling of large area boron compensated 6H-SiC pin structures
- G. Brezeanu, M. Badila, B. Tudor, P. Godignon, J. Millan, M.L. Locatelli, J.P. Chante, A. Lebedev, N.S. Savkina, Electrical characteristics modeling of large area boron compensated 6H-SiC pin structures, Solid State Electronics 44 (2000) 571-579.
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6
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- 6H-SiC diodes with cellular structure to avoid micropipes effects
- M. Badila, G. Brezeanu, J.P. Chante, M.-L. Locatelli, J. Millan, P. Godignon, A. Lebedev, P. Lungu, V. Banu, 6H-SiC diodes with cellular structure to avoid micropipes effects, in: Proceedings of the 2nd International Silicon Carbide and Related Materials Conference, 1999.
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7
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8
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- Comparison of 6H-SiC, 3C-SiC and Si for power devices
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- Bhatnagar, M.¹ Baliga, B.J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.