"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1703-1710

  Levinshtein, Michael E ^b   Mnatsakanov, Tigran T ^c   Ivanov, Pavel ^b   Palmour, John W ^a,d   Rumyantsev, Sergey L ^b,e   Singh, Ranbir ^d   Yurkov, Sergei N ^c  

^a IEEE

^b IOFFE INSTITUTE   (Russian Federation)

^c ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^d Arkansas Power Electronics International Inc   (United States)

^e RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Carrier lifetime; High voltage techniques; Semiconductor diodes; Silicon carbide (SiC)

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFERENTIAL EQUATIONS; ELECTRIC BREAKDOWN; ELECTRIC WAVEFORMS; ENERGY GAP; POISSON EQUATION; RELIABILITY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

CARRIER LIFETIME MEASUREMENT; HIGH-VOLTAGE RECTIFIER DIODE; HIGH-VOLTAGE SILICON CARBIDE DIODE; POST-INJECTION VOLTAGE DECAY; REVERSE CURRENT RECOVERY;

SEMICONDUCTOR DIODES;

EID: 0035423917     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936692     Document Type: Article

References (29)

1. 6.2 kV 4H-SiC pin diode with low forward voltage drop
2. 2600 V, 12 A, 4H-SiC, asymmetrical gate turn-off (GTO) thyristor development
3. Transient response of a p-n junction
4. Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities
5. High hole lifetime (3.8 ms) in 4H-SiC diodes with 5.5 kV blocking voltage
6. About recovery characteristics of semiconductor rectifiers
7. Measurement of minority carrier lifetime and surface effects in junction diodes
8. On the post-injection voltage decay of the p-s-n rectifiers at high injection levels
9. Carrier lifetime in 4H-SiC studied by different optical techniques
10. Time-resolved imaging of radiative recombination in 4H-SiC p-i-n diode
11. Al/C/B co-implanted high voltage 4H-SiC pin junction rectifiers
12. Transport coefficients and Einstein relation in a high density plasma of solids
13. Effect of electron-hole scattering on the current flow in semiconductors
14. Comment on modeling of electron-hole scattering in semiconductor devices
15. Doping-induced band edge displacements and bandgap narrowing in 3C-, 4H-, 6H-SiC, and Si
16. Time-resolved imaging of radiative recombination in 4H-SiC p-i-n diodes
17. The connection between carrier lifetime and doping density in nondegenerate semiconductors
18. Conductivity anisotropy in epitaxial 6H and 4H SiC
19. Investigation of the effect of nonlinear physical phenomena on charge carrier transport in semiconductor devices
20. The forward characteristics of silicon power rectifiers at high current densities
21. Current-voltage characteristics of power semiconductor devices at high current densities
22. Nondestructive defect characterization and engineering in contemporary silicon power devices
23. Accurate simulation of fast ion irradiation power devices
24. Modeling of "memory" effects in amorphous semiconductors
25. Memory effects in many-layer structures with p-n junction
26. The forward characteristic of silicon power rectifiers at high current densities
27. Modeling of electron-hole scattering in semiconductor devices
28. Conductivity anisotropy in epitaxial 6H SiC