Modeling of lattice site-dependent incomplete ionization in α-SiC devices

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 845-848

  Ayalew, T ^a   Grasser, T ^a   Kosina, H ^b   Selberherr, S ^b  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Activation energy; Incomplete ionization; Inequivalent sites; SiC; Simulation

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; CRYSTAL IMPURITIES; ENERGY GAP; IONIZATION;

BANDGAP SEMICONDUCTORS; DOPING ELEMENTS; INCOMPLETE IONIZATION; IONIZATION MODELS; ROOM TEMPERATURE;

SILICON CARBIDE;

EID: 35148835692     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.845     Document Type: Conference Paper

References (5)

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2. T. Ayalew, Dissertation, SiC Semiconductor Devices Technology, Modeling, and Simulation, TU-Vienna, Austria (2004), http://www.iue.tuwie. ae.at/phd/ayalew/.
3. M. Ikeda et al., Physical Review B Vol. 22 (1980), p. 2842.
4. Minimos-NT, Device and Circuit Simulator, User's Guide, Institute for Microelectronics, TU-Vienna, Austria (2002), http://www.iue.tuwien.ac.at/ mmnt/.
5. C. M. Zetterling, EMIS series, no. 2, INSPEC, IEE, UK (2002).