SiC power DIMOS with double implanted Al/B P-well

Microelectronics Journal

Volumn 32, Issue 5-6, 2001, Pages 503-507

  Godignon, P ^a   Morvan, E ^a   Jorda X ^a   Vellvehi, M ^a   Flores, D ^a   Rebollo, J ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

High temperature; Implantation; Power MOSFET; Silicon carbide

Indexed keywords

INTERFACES (MATERIALS); POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING; SILICON CARBIDE;

DOUBLE-IMPLANTED METAL OXIDE SEMICONDUCTORS (DIMOS);

MOSFET DEVICES;

EID: 0035333669     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(01)00022-2     Document Type: Article

References (6)

1. Status of silicon carbide (SiC) as wide bandgap semiconductor for high temperature applications
2. High voltage double implanted power MOSFET's in 6H-SiC
3. Electrical characterisation of MNOS devices on P-type 6H-SiC
4. Montecarlo simulation of ion implantation into 6H-SiC single crystal including channelling effect
5. Rugged power MOSFETs in 6H-SiC with blocking capability up to 1800 V
6. Anisotropy of inversion channel mobility in 4H and 6H-SiC MOSFETs on 1120 face