Pliant epitaxial ionic oxides on silicon

Advanced Materials

Volumn 20, Issue 20, 2008, Pages 3827-3831

  Kukuruznyak, Dmitry ^a,b   Reichert, Harald ^b   Ohmori, Kenji ^a,c   Ahmet, Parhat ^a,d   Chikyow, Toyohiro ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c WASEDA UNIVERSITY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; HAFNIUM COMPOUNDS; RHENIUM ALLOYS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SUBSTRATES; THICK FILMS;

ATOMIC MIXING; COMPOSITION SPREADS; HIGH TEMPERATURES; IDENTICAL CONDITIONS; IONIC OXIDES; IONIC STRUCTURES; LOW VISCOSITIES; SI(001) SUBSTRATE;

CRYSTAL ATOMIC STRUCTURE;

EID: 55749110201     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200702234     Document Type: Article

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