Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses

Applied Physics Letters

Volumn 79, Issue 10, 2001, Pages 1444-1446

  Posselt, M ^a   Bischoff, L ^a   Teichert, J ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345893804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1396319     Document Type: Article

References (12)

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