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Physical Review Letters

Volumn 88, Issue 8, 2002, Pages 085501/1-085501/4

Growth of precursors in silicon using pseudopotential calculations

(3) Chichkine, M P a De Souza, M M a Sankara Narayanan, E M a

a DE MONTFORT UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BINDING ENERGY; CALCULATIONS; IRRADIATION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

BOND CENTERED INTERSTITIAL; CHAINLIKE DEFECTS; ION IRRADIATION; PSEUDOPOTENTIAL CALCULATION;

DEFECTS;

EID: 0037170201 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.88.085501 Document Type: Article

Times cited : (20)

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