Identifying atomic geometry and electronic structure of (2×3) -Sr/Si (100) surface and its initial oxidation

Journal of Chemical Physics

Volumn 129, Issue 16, 2008, Pages

  Du, Wenhan ^a   Wang, Bing ^a   Xu, Lei ^a,b   Hu, Zhenpeng ^a   Cui, Xuefeng ^a   Pan, B C ^a,b   Yang, Jinlong ^a   Hou, J G ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; ELECTRONIC STATES; ELECTRONIC STRUCTURE; IMAGE ENHANCEMENT; MICROSCOPIC EXAMINATION; OXIDATION; OXYGEN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SURFACE STRUCTURE;

AB INITIO CALCULATIONS; ATOMIC GEOMETRIES; DARK SPOTS; EMPTY STATES; INITIAL OXIDATIONS; LOCAL DENSITY OF STATES; METALLIC BEHAVIORS; OXIDATION MODELS; OXIDATION SITES; OXYGEN MOLECULES; SEMICONDUCTING BEHAVIORS; SI ATOMS; SI SUBSTRATES; SINGLE ATOMS; SINGLE OXYGEN MOLECULES; STM/STS; THEORETICAL CALCULATIONS; TUNNELING SPECTROSCOPIES;

CHEMICAL OXYGEN DEMAND;

EID: 55349145229     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3001580     Document Type: Article

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