Photoemission from the Sr/Si(001) interface

Journal of Applied Physics

Volumn 90, Issue 12, 2001, Pages 6070-6072

  Herrera Gomez A ^a   Aguirre Tostado, F S ^a   Sun, Y ^b   Pianetta, P ^b   Yu, Z ^c   Marshall, D ^c   Droopad, R ^c   Spicer, W E ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035894205     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1415758     Document Type: Article

References (16)

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8. The data were examined with a program called AANALYZER.® A free copy can be requested at alberto@ciateq.mx.
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12. The escape depth of Si at hv=160 eV (employed to calculate the Sr coverage) was obtained from analysis of the clean surface, and it coincides with interpolation of escape depth values provided by F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, and J. A. Yarmoff, Phys. Rev. B 38, 6084 (1998).
13. The values for the cross section of Si and Sr at hv=160 eV were obtained from J. J. Yeh and I. Lindau, At. Data Nucl. Data Tables 32, 1 (1985).
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16. The correspondence between the area of the new chemical components with coverage was used to estimate the saturation coverage at different temperatures. This analysis resulted in essentially the same values as those in Fig. 1.