SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 350, Issue 1, 1999, Pages 147-152

Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO2 interface defects

(1) Gadiyak, G V a

a INSTITUTE OF COMPUTATIONAL TECHNOLOGIES (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; APPROXIMATION THEORY; DISSOCIATION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PASSIVATION; RATE CONSTANTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMOOXIDATION; VACUUM TECHNOLOGY;

HYDROGEN PASSIVATION; THERMAL DISSOCIATION; VACUUM THERMAL ANNEALING;

SEMICONDUCTING FILMS;

EID: 0032650150 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(99)00288-6 Document Type: Article

Times cited : (8)

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