Charge-carrier dynamics and trap generation in native Si/SiO2 interfaces probed by optical second-harmonic generation

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 16, 2004, Pages

  Scheidt, T ^a   Rohwer, E G ^a   Von Bergmann, H M ^a   Stafast, H ^b  

^a STELLENBOSCH UNIVERSITY   (South Africa)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON DIOXIDE;

AMPLITUDE MODULATION; ARTICLE; ELECTRICITY; ELECTRON TRANSPORT; MOLECULAR DYNAMICS; MOLECULAR PROBE; SCANNING ELECTRON MICROSCOPY; SIGNAL TRANSDUCTION;

EID: 37649031358     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.165314     Document Type: Article

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