Characteristics and mechanisms of hysteresis in polymer field-effect transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 3, 2008, Pages 534-548

  Paasch, G ^a   Scheinert, S ^b   Herasimovich, A ^b   Horselmann I ^b   Lindner, Th ^a  

^a IFW DRESDEN   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION LAYERS; BIPOLARONS; CHARGED STATES; FLAT BANDS; GATE VOLTAGES; HYSTERESIS EFFECTS; IN FIELDS; LITERATURE SURVEYS; MIS CAPACITORS; MOBILE IONS; NUMERICAL SIMULATIONS; PARAMETER VALUES; POLYMER CHAINS; POLYMER FIELDS; SWEEP DIRECTIONS; TIME-SCALE; TRAP RECHARGING;

ABS RESINS; ADMINISTRATIVE DATA PROCESSING; CAPACITANCE; CAPACITORS; COMPUTER SIMULATION; DIELECTRIC DEVICES; ELASTICITY; ELECTRIC EQUIPMENT; ELECTROLYSIS; ELECTRONIC PROPERTIES; HYSTERESIS; IONIC CONDUCTION; IONS; METAL INSULATOR BOUNDARIES; MIS DEVICES; POLARONS; POLYMERS; RATE CONSTANTS; SWITCHING CIRCUITS; TELECOMMUNICATION NETWORKS; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 54849414054     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723400     Document Type: Article

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