Modeling observed capacitance-voltage hysteresis in metal-SiO2-thin film organic semiconductor devices

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1097-1104

  Niemann, Darrell ^a   Gunther, Norman ^a   Kwong, Charles ^a   Barycza, Mark ^a   Rahman, Mahmud ^a  

^a Department of Computer Science and Engineering   (United States)

Author keywords

Arylamino PPV; Capacitance; Hysteresis; MOOSCAP; OFET; Organic semiconductors; Pentacene; Polarization charge; TCAD; Thermodynamic variational model; Threshold voltage

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; HYSTERESIS; MATHEMATICAL MODELS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON; THIN FILM CIRCUITS; THRESHOLD VOLTAGE;

ARYLAMINO-PPV; MOOSCAP; OFET; PENTACENE; POLARIZATION CHARGES; TCAD; THERMODYNAMIC-VARIATIONAL MODELS;

MOS CAPACITORS;

EID: 33745737782     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.032     Document Type: Article

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