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Volumn 93, Issue 3, 2008, Pages 697-703
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Characteristics of ZnO epilayer on the post-annealed buffer layer on GaN/sapphire substrate by pulsed laser deposition
a
KEIO UNIVERSITY
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ATMOSPHERIC PRESSURE;
BUFFER LAYERS;
CARRIER CONCENTRATION;
CONCENTRATION (PROCESS);
CRYSTAL GROWTH;
ELECTROMAGNETIC WAVES;
EPILAYERS;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
GROWTH TEMPERATURE;
LIGHT EMISSION;
LIGHT SOURCES;
LUMINESCENCE;
METALLIC FILMS;
OPTICAL WAVEGUIDES;
PULSED LASER APPLICATIONS;
PULSED LASER DEPOSITION;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING ZINC COMPOUNDS;
SUBSTRATES;
ZINC ALLOYS;
ZINC OXIDE;
ANNEALING EFFECTS;
ANNEALING TECHNIQUES;
BUFFER LAYER GROWTHS;
CATHODE LUMINESCENCES;
DEEP LEVELS;
FLOW GROWTHS;
GAN SUBSTRATES;
GAN/SAPPHIRE;
HALL MEASUREMENTS;
LOW TEMPERATURES;
MORPHO-LOGIES;
PULSED LASERS;
SMOOTH SURFACES;
VISIBLE LUMINESCENCES;
ZNO FILMS;
FILM GROWTH;
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EID: 54549118147
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/s00339-008-4717-6 Document Type: Article |
Times cited : (3)
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References (30)
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