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Volumn 93, Issue 3, 2008, Pages 697-703

Characteristics of ZnO epilayer on the post-annealed buffer layer on GaN/sapphire substrate by pulsed laser deposition

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; BUFFER LAYERS; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTROMAGNETIC WAVES; EPILAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; METALLIC FILMS; OPTICAL WAVEGUIDES; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; ZINC ALLOYS; ZINC OXIDE;

EID: 54549118147     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4717-6     Document Type: Article
Times cited : (3)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.