A challenge in molecular beam epitaxy of ZnO: Control of material properties by interface engineering

Thin Solid Films

Volumn 409, Issue 1, 2002, Pages 153-160

  Ko, Hang Ju ^a   Hong, Soon Ku ^a   Chen, Yefen ^a   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Biexciton emission; Interface; Molecular beam epitaxy; Pregrowth treatment; ZnO layer

Indexed keywords

ANNEALING; CRYSTAL GROWTH; DEGRADATION; ELECTRIC EXCITATION; EXCITONS; HIGH ENERGY ELECTRON DIFFRACTION; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; STRAIN MEASUREMENT; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

LATTICE STRAIN;

ZINC OXIDE;

EID: 0037156056     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00119-0     Document Type: Conference Paper

References (24)