Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region

Applied Surface Science

Volumn 252, Issue 24, 2006, Pages 8482-8486

  Zheng, Tianhang ^a   Li, Ziquan ^a   Chen, Jiankang ^a   Shen, Kai ^a   Sun, Kefei ^a  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

Author keywords

Annealing; Ge ZnO multilayers; Microstructure; Photoluminescence

Indexed keywords

ANNEALING; MAGNETRON SPUTTERING; MICROSTRUCTURE; MULTILAYERS; PHOTOLUMINESCENCE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

GE/ZNO MULTILAYERS; MULTILAYER FILMS; OPTICAL TRANSITION; OXYGEN VACANCY;

GERMANIUM COMPOUNDS;

EID: 33748978384     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.11.052     Document Type: Article

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