Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3117-3119

  Myronov, M ^a   Irisawa, T ^b   Mironov, O A ^a   Koh, S ^b   Shiraki, Y ^b   Whall, T E ^a   Parker, E H C ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRIFT MOBILITIES; HALL RESISTANCE; MAGNETIC FIELD DEPENDENCES; MAXIMUM ENTROPY; MOBILITY SPECTRUM ANALYSIS; MODULATION-DOPED; P-TYPE; ROOM TEMPERATURE; SEMICONDUCTOR HETEROSTRUCTURES; SHEET CARRIER DENSITIES; STRAINED CHANNELS; TWO-DIMENSIONAL HOLE GAS; TWO-DIMENSIONAL HOLE GAS (2DHG);

CARRIER CONCENTRATION; CRYSTALS; ELECTRIC RESISTANCE; ELECTRON ABSORPTION; GASES; GERMANIUM; HALL MOBILITY; HETEROJUNCTIONS; MAGNETIC FIELDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON; SPECTRUM ANALYSIS; TWO DIMENSIONAL;

HOLE MOBILITY;

EID: 79955983616     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1473690     Document Type: Article

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