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Volumn 336, Issue 1-2, 1998, Pages 141-144
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Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications
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Author keywords
Germanium; Mobility; Silicon
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Indexed keywords
CARRIER MOBILITY;
FIELD EFFECT TRANSISTORS;
HALL EFFECT;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING SILICON COMPOUNDS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
STRAIN RELIEVED BUFFER (SRB);
HETEROJUNCTIONS;
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EID: 0032315498
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)01313-3 Document Type: Article |
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Times cited : (38)
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References (8)
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