Si/SiGe FETs grown by MBE on a LEPECVD grown virtual substrate

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 368-372

  Mack, T ^a,d   Hackbarth, T ^a   Seiler, U ^a   Herzog, H J ^a   Von Kanel H ^b   Kummer, M ^b   Ramm, J ^c   Sauer, R ^d  

^a DAIMLER AG   (Germany)

^b ETH ZURICH   (Switzerland)

^c FL 9496 Balzers   (Germany)

^d UNIVERSITY OF ULM   (Germany)

Author keywords

LEPECVD; MBE; Mixed technology; MODFET; Si SiGe hetero structure

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; HALL EFFECT; MOLECULAR BEAM EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

VIRTUAL SUBSTRATES (VS);

FIELD EFFECT TRANSISTORS;

EID: 0037074852     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00831-5     Document Type: Conference Paper

References (10)