Channel width dependence of mobility in Ge channel modulation-doped structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2694-2696

  Irisawa, T ^a   Miura, H ^a   Ueno, T ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Channel width; Ge channel; Mobility; Modulation doped structure; Strain relaxation

Indexed keywords

CARRIER MOBILITY; GERMANIUM; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SCATTERING; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

CHANNEL MODULATION; STRAIN RELAXATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035300779     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2694     Document Type: Article

References (12)