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Volumn 30, Issue 3, 2001, Pages 123-128
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Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures
a a,b a c c |
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Author keywords
AlGaN GaN HEMT; AlGaN GaN heterostructures; Defect states; LEEN; Low energy electron excited nanoscale luminescence spectroscopy
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
COMPOSITION EFFECTS;
CRYSTAL DEFECTS;
ELECTRIC PROPERTIES;
ELECTRON BEAMS;
ELECTRON GAS;
ELECTRONIC PROPERTIES;
GALLIUM NITRIDE;
HETEROJUNCTIONS;
LUMINESCENCE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
ALUMINUM GALLIUM NITRIDE;
BARRIER LAYER;
BUFFER LAYER;
ELECTRONIC STATE TRANSITIONS;
INCIDENT ELECTRON BEAM ENERGIES;
LOW ENERGY ELECTRON EXCITED NANOSCALE LUMINESCENCE SPECTROSCOPY;
TWO DIMENSIONAL ELECTRON GAS CONFINEMENT;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0035274790
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-001-0004-4 Document Type: Article |
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Times cited : (16)
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References (15)
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