Charge trapping at the low- k dielectric-silicon interface probed by the conductance and capacitance techniques

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Atkin, J M ^a   Cartier, E ^b   Shaw, T M ^b   Laibowitz, R B ^a   Heinz, T F ^a  

^a Department of Earth and Environmental Sciences   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON FILMS; CHARGE TRAPPING; CONTACTS (FLUID MECHANICS); DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRIC CURRENTS; FILMS; GOLD; MATERIALS SCIENCE; NONMETALS; OXIDE FILMS; SILICON; THICK FILMS;

CAPACITOR STRUCTURES; CARBON-DOPED OXIDE; CHARGE STATES; CONDUCTANCE MEASUREMENTS; COUNTER-ELECTRODES; DENSITY OF TRAPS; ELECTRICAL LEAKAGE; INTERFACIAL BARRIERS; INTERFACIAL TRAPS; LOW-K DIELECTRIC FILMS; LOW-K DIELECTRICS; POROUS LOW-K; SILICON INTERFACES; THIN FILMS; TRAP STATES;

DIELECTRIC MATERIALS;

EID: 52949116792     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990648     Document Type: Article

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