-
1
-
-
34648819822
-
Electromigration in ULSI interconnects
-
C. M. Tan and A. Roy, "Electromigration in ULSI interconnects," Mater. Sci. Eng., Rev., vol. 342, 2007.
-
(2007)
Mater. Sci. Eng., Rev
, vol.342
-
-
Tan, C.M.1
Roy, A.2
-
2
-
-
0242273211
-
Electromigration failure in ultra-fine copper interconnects
-
N. L. Michael, C. Kim, P. Gillespie, and R. Augur, "Electromigration failure in ultra-fine copper interconnects" J. Electron. Mater., vol. 32, pp. 988-993, 2003.
-
(2003)
J. Electron. Mater
, vol.32
, pp. 988-993
-
-
Michael, N.L.1
Kim, C.2
Gillespie, P.3
Augur, R.4
-
3
-
-
28044473872
-
Reliability studies of narrow Cu lines
-
G. Schindler, S. Penka, G. Steinlesberger, M. Traving, W. Steinhogl, and M. Engelhardt, "Reliability studies of narrow Cu lines" Microelectron. Eng., vol. 82, pp. 645-649, 2005.
-
(2005)
Microelectron. Eng
, vol.82
, pp. 645-649
-
-
Schindler, G.1
Penka, S.2
Steinlesberger, G.3
Traving, M.4
Steinhogl, W.5
Engelhardt, M.6
-
4
-
-
1642330685
-
On the scaling of thermal stresses in passivated nanointerconnects
-
P. Sharma, S. Ganti, H. Ardebili, and A. Alizadeh, "On the scaling of thermal stresses in passivated nanointerconnects," J. Appl. Phys., vol. 95, pp. 2763-2769 2004.
-
(2004)
J. Appl. Phys
, vol.95
, pp. 2763-2769
-
-
Sharma, P.1
Ganti, S.2
Ardebili, H.3
Alizadeh, A.4
-
7
-
-
25944438622
-
Electrical Resistivity Model for Polycrystalline Films: The Case of Arbitrary Reflection at External Surfaces
-
A. F. Mayadas and M. Shatzkes, "Electrical Resistivity Model for Polycrystalline Films: The Case of Arbitrary Reflection at External Surfaces," Phys. Rev. B, vol. 1, pp. 1382-1389, 1970.
-
(1970)
Phys. Rev. B
, vol.1
, pp. 1382-1389
-
-
Mayadas, A.F.1
Shatzkes, M.2
-
8
-
-
0000754467
-
Mean-free-path concept in polycrystalline metals
-
J. Vancea, G. Reiss, and H. Hoffmann, "Mean-free-path concept in polycrystalline metals" Phys. Rev. B, vol. 35, pp. 6435-6437, 1987.
-
(1987)
Phys. Rev. B
, vol.35
, pp. 6435-6437
-
-
Vancea, J.1
Reiss, G.2
Hoffmann, H.3
-
9
-
-
52649177409
-
-
J. Vancea, Erratum: Unconventional features of free electrons in polycrystalline metal films Int. J. Mod. Phys. B, 3, pp. 1455-L501, 1989.
-
J. Vancea, "Erratum: Unconventional features of free electrons in polycrystalline metal films" Int. J. Mod. Phys. B, vol. 3, pp. 1455-L501, 1989.
-
-
-
-
10
-
-
31544460988
-
Electrical resistivity of polycrystalline Cu interconnects with nano-scale linewidth
-
M. Shimada, M. Moriyama, K. Ito, S. Tsukimoto, and M. Murakami, "Electrical resistivity of polycrystalline Cu interconnects with nano-scale linewidth," J. Vac. Sci. Technol., vol. 24, pp. L90-194, 2006.
-
(2006)
J. Vac. Sci. Technol
, vol.24
-
-
Shimada, M.1
Moriyama, M.2
Ito, K.3
Tsukimoto, S.4
Murakami, M.5
-
11
-
-
8644261615
-
Aluminum nano interconnects
-
IEEE, New York
-
G. Steinlesberger, G. Schindler, M. Engelhardt, W. Steinhogl, and W. Traving, "Aluminum nano interconnects," in Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International: IEEE, New York, 2004, pp. 51-53.
-
(2004)
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
, pp. 51-53
-
-
Steinlesberger, G.1
Schindler, G.2
Engelhardt, M.3
Steinhogl, W.4
Traving, W.5
-
12
-
-
0036776507
-
Electrical assessment of copper damascene interconnects down to sub-50 nm feature sizes
-
M. Engelhardt, G. Schindler, W. Steinhogl, and G. Steinlesberger, "Electrical assessment of copper damascene interconnects down to sub-50 nm feature sizes" Microelectron. Eng., vol. 64, pp. 409-416 2002.
-
(2002)
Microelectron. Eng
, vol.64
, pp. 409-416
-
-
Engelhardt, M.1
Schindler, G.2
Steinhogl, W.3
Steinlesberger, G.4
-
13
-
-
0037104274
-
Size-dependent resistivity of metallic wires in the mesoscopic range
-
W. Steinhogl, G. Schindler, G. Steinlesberger, and M. Engelhardt, "Size-dependent resistivity of metallic wires in the mesoscopic range" Phys. Rev. B, vol. 66, p. 075414, 2002.
-
(2002)
Phys. Rev. B
, vol.66
, pp. 075414
-
-
Steinhogl, W.1
Schindler, G.2
Steinlesberger, G.3
Engelhardt, M.4
-
14
-
-
19944432253
-
Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller
-
W. Steinhogl, G. Schindler, G. Steinlesberger, M. Traving, and M. Engelhardt, "Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller," J. Appl. Phys., vol. 97, p. 023706, 2005.
-
(2005)
J. Appl. Phys
, vol.97
, pp. 023706
-
-
Steinhogl, W.1
Schindler, G.2
Steinlesberger, G.3
Traving, M.4
Engelhardt, M.5
-
15
-
-
33644906605
-
Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects
-
C. M. Tan and A. Roy, "Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects" Thin Solid Films, vol. 504, pp. 288-293, 2006.
-
(2006)
Thin Solid Films
, vol.504
, pp. 288-293
-
-
Tan, C.M.1
Roy, A.2
-
16
-
-
52649124949
-
-
I. T. R. f. Semiconductors, http://www.itrs.net/reports.html, 2006.
-
I. T. R. f. Semiconductors, http://www.itrs.net/reports.html, 2006.
-
-
-
-
17
-
-
0000034975
-
Electromigration path in Cu thin-film lines
-
C.-K. Hu, R. Rosenberg, and K. Y. Lee, "Electromigration path in Cu thin-film lines," Appl. Phys. Lett., vol. 74, p. 2945, 1999.
-
(1999)
Appl. Phys. Lett
, vol.74
, pp. 2945
-
-
Hu, C.-K.1
Rosenberg, R.2
Lee, K.Y.3
-
18
-
-
0038035318
-
Stress evolution due to electromigration in confined metal lines
-
M. A. Korhonen, R. D. Black, and C.-Y. Li, "Stress evolution due to electromigration in confined metal lines," J. Appl. Phys., vol. 73, pp. 3790-3799, 1993.
-
(1993)
J. Appl. Phys
, vol.73
, pp. 3790-3799
-
-
Korhonen, M.A.1
Black, R.D.2
Li, C.-Y.3
-
19
-
-
33846987873
-
Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects
-
W. Shao, S. G. Mhaisalkar, T. Sritharan, A. V. Vairagar, H. J. Engelmann, O. Aubel, E. Zschech, A. M. Gusak, and K. N. Tu, "Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects," Appl. Phys. Lett., vol. 90, p. 052106, 2007.
-
(2007)
Appl. Phys. Lett
, vol.90
, pp. 052106
-
-
Shao, W.1
Mhaisalkar, S.G.2
Sritharan, T.3
Vairagar, A.V.4
Engelmann, H.J.5
Aubel, O.6
Zschech, E.7
Gusak, A.M.8
Tu, K.N.9
-
21
-
-
0033709195
-
Copper Metallization for high performance silicon technology
-
R. Rosenberg, D. C. Edelstein, C.-K. Hu, and K. P. Rodbell, "Copper Metallization for high performance silicon technology," Annu. Rev. Mater. Sci., vol. 30, pp. 229-262, 2000.
-
(2000)
Annu. Rev. Mater. Sci
, vol.30
, pp. 229-262
-
-
Rosenberg, R.1
Edelstein, D.C.2
Hu, C.-K.3
Rodbell, K.P.4
-
22
-
-
4544258679
-
Reliability challenges with ultra-low k interlevel dielectrics
-
J. R. Lloyd, M. R. Lane, X.-H. Liu, E. Liniger, T. M. Shaw, C.-K. Hu, and R. Rosenberg, "Reliability challenges with ultra-low k interlevel dielectrics," Microelectron. Reliab., vol. 44, pp. 1835-1841, 2004.
-
(2004)
Microelectron. Reliab
, vol.44
, pp. 1835-1841
-
-
Lloyd, J.R.1
Lane, M.R.2
Liu, X.-H.3
Liniger, E.4
Shaw, T.M.5
Hu, C.-K.6
Rosenberg, R.7
|