Electrical resistivity of polycrystalline Cu interconnects with nano-scale linewidth

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 190-194

  Shimada, Masahiro ^a   Moriyama, Miki ^b   Ito, Kazuhiro ^a   Tsukimoto, Susumu ^a   Murakami, Masanori ^a  

^a KYOTO UNIVERSITY   (Japan)

^b Toyoda Gosei Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; GRAIN BOUNDARIES; ION BEAMS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; OPTICAL INTERCONNECTS; POLYCRYSTALLINE MATERIALS; SCATTERING PARAMETERS;

LINEWIDTHS; MAYADAS-SHATZKES (MS) MODEL; ULTRATHIN BARRIER LAYERS;

ELECTRIC CONDUCTIVITY;

EID: 31544460988     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2151910     Document Type: Article

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