Electromigration failure in ultra-fine copper interconnects

Journal of Electronic Materials

Volumn 32, Issue 10, 2003, Pages 988-993

  Michael, Nancy L ^a   Kim, Choong Un ^a   Gillespie, Paul ^b,c   Augur, Rod ^b  

^a The University of Texas at Arlington   (United States)

^b SEMATECH   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Cu interconnects; Diffusion barrier; Electromigration; Interface

Indexed keywords

COPPER; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; FAILURE ANALYSIS; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MICROSCOPIC EXAMINATION;

ELECTROMIGRATION FAILURE; ULTRA FINE COPPER INTERCONNECTS;

ELECTROMIGRATION;

EID: 0242273211     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0080-8     Document Type: Article

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