Electrical assessment of copper damascene interconnects down to sub-50 nm feature sizes

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 409-416

  Steinlesberger, G ^a,c   Engelhardt, M ^a   Schindler, G ^a   Steinhogl W ^a   Von Glasow, A ^a   Mosig, K ^a,b   Bertagnolli, E ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b SEMATECH   (United States)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Copper damascene; Resistivity; Size effect; Sub 50 nm interconnect; Temperature dependence

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRON SCATTERING; GRAIN BOUNDARIES; LITHOGRAPHY; THERMAL EFFECTS;

COPPER DAMASCENE INTERCONNECTS;

ELECTRIC CONNECTORS;

EID: 0036776507     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00815-8     Document Type: Conference Paper

References (7)

1. Modelling the electrical resistivity of sub-50 nm copper wires