SCOPUS 정보 검색 플랫폼

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 71-74

In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy

Author keywords

A1. In situ monitoring; A1. Stresses; A3. Molecular beam epitaxy; B1. Group III nitrides; B2. GaN

Indexed keywords

BENDING (DEFORMATION); CRYSTAL GROWTH; HETEROJUNCTIONS; IN SITU PROCESSING; MOLECULAR BEAM EPITAXY; RESIDUAL STRESSES; STRAIN RELAXATION;

IN SITU MEASUREMENTS; ROOM TEMPERATURE; WAFER BENDING CURVATURE;

SILICON WAFERS;

EID: 33947360339 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.11.126 Document Type: Article

Times cited : (19)

References (9)

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