Design and performance of a new reactor for vapor phase epitaxy of 3C, 6H, and 4H SiC

Journal of the Electrochemical Society

Volumn 143, Issue 9, 1996, Pages 2910-2919

  Nordell, N ^a   Schoner A ^a   Andersson, S G ^b  

^a ACREO AB   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); ETCHING; GAS DYNAMICS; HYDROCHLORIC ACID; INTERFACES (MATERIALS); SILICON CARBIDE; VAPOR PHASE EPITAXY;

CRYSTALLINITY; GAS STREAM; GRAPHITE INNER CELL; HORIZONTAL REACTOR; THICKNESS UNIFORMITY;

ELECTRIC REACTORS;

EID: 0030246309     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837126     Document Type: Article

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